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MITSUBISHI THYRISTOR MODULES
TM130RZ/EZ/GZ-M,-H
HIGH POWER GENERAL USE
INSULATED TYPE
TM130RZ/EZ/GZ-M,-H
* IT (AV) * IF (AV) * VRRM * * * *
(RZ Type)
Average on-state current .......... 130A Average forward current .......... 130A Repetitive peak reverse voltage ........ 400/800V VDRM Repetitive peak off-state voltage ........ 400/800V MIX DOUBLE ARMS Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION DC motor control, NC equipment, AC motor control, contactless switches, electric furnace temperature control, light dimmers
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
3-6.5 3-M8 A1
20
(RZ) K1 K2 A2 A1
40
CR
K1 A2 K2 SR K1 G1
K1 G1
6
18 30 68.5
16 32 150
18 30 68.5
16 (EZ) CR A1 K1 K2 Tab#110, t=0.5
23 9 32 39
A2 SR K1 G1
LABEL
7
(GZ) CR A1 K1 K2 SR
A2 K1 G1
(RZ Type)
(Bold line is connective bar.)
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM130RZ/EZ/GZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VRRM VRSM VR (DC) VDRM VDSM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage DC off-state voltage Voltage class M 400 480 320 400 480 320 H 800 960 640 800 960 640 Unit V V V V V V
Symbol IT (RMS), IF (RMS) IT (AV), IF (AV) ITSM, IFSM I2t di/dt PGM PG (AV) VFGM VRGM IFGM Tj Tstg Viso
Parameter RMS current Average current Surge (non-repetitive) current I2t for fusing Critical rate of rise of on-state current Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Isolation voltage Charged part to case Main terminal screw M8
Conditions
Ratings 205
Unit A A A A2s A/s W W V V A C C V N*m kg*cm N*m kg*cm g
Single-phase, half-wave 180 conduction, TC=85C One half cycle at 60Hz, peak value Value for one cycle of surge current VD=1/2VDRM, IG=1.0A, Tj=125C
130 2600 2.8 x 104 100 10 3.0 10 5.0 4.0 -40~125 -40~125 2500 8.83~10.8 90~110 1.96~3.92 20~40 300
--
Mounting torque Mounting screw M6
--
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Limits Symbol IRRM IDRM VTM, VFM dv/dt VGT VGD IGT Rth (j-c) Rth (c-f) -- Parameter Repetitive peak reverse current Repetitive peak off-state current Forward voltage Critical rate of rise of off-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Thermal resistance Contact thermal resistance Insulation resistance Tj=125C, VRRM applied Tj=125C, VDRM applied Tj=125C, ITM=IFM=390A, instantaneous meas. Tj=125C, VD=2/3VDRM Tj=25C, VD=6V, RL=2 Tj=125C, VD=1/2VDRM Tj=25C, VD=6V, RL=2 Junction to case (per 1/2 module) Case to fin, conductive grease applied (per 1/2 module) Measured with a 500V megohmmeter between main terminal and case Test conditions Min. -- -- -- 500 -- 0.25 15 -- -- 10 Typ. -- -- -- -- -- -- -- -- -- -- Max. 30 30 1.3 -- 3.0 -- 100 0.22 0.1 -- Unit mA mA V V/s V V mA C/ W C/ W M
Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables.
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM130RZ/EZ/GZ-M,-H
HIGH POWER GENERAL USE
INSULATED TYPE
MAXIMUM RATINGS
Item Thyristor Diode -- -- -- -- VRRM VRSM VR (DC) VDRM VDSM VD (DC) IT (RMS) IF (RMS) IT (AV) IF (AV) ITSM IFSM I2t di/dt
Item Thyristor Diode
PGM
PG (AV)
VFGM
IFGM
Tj
Tstg
--
--
--
--
ELECTRICAL CHARACTERISTICS
Item Thyristor Diode -- -- -- -- -- IRRM IDRM VTM VFM dv/dt VGT VGD IGT Rth (j-c) Rth (c-f)
PERFORMANCE CURVES
MAXIMUM FORWARD CHARACTERISTIC 10 4 7 5 3 2 CURRENT (A) 10 2 7 5 3 2 10 2 7 5 3 2 10 1 0.4 3200 SURGE (NON-REPETITIVE) CURRENT (A) Tj=125C 2800 2400 2000 1600 1200 800 400 0.8 1.2 1.6 2.0 2.4 0 1 23 5 7 10 20 30 50 70100 RATED SURGE (NON-REPETITIVE) CURRENT
FORWARD VOLTAGE (V)
CONDUCTION TIME (CYCLE AT 60Hz)
GATE CHARACTERISTICS 4 3 2 10 1 GATE VOLTAGE (V) 7 5 3 2 VGT=3.0V PG(AV)= 3.0W
VFGM=10V
PGM=10W
TRANSIENT THERMAL IMPEDANCE (C/W)
MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 7 10 1 0.25
0.20
0.15
10 0 7 5 IGT= 100mA 3 2
Tj=25C
0.10
10 -1 VGD=0.25V IFGM=4.0A 7 5 410 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 4 GATE CURRENT (mA)
0.05 0 10 -3 2 3 5 710 -2 2 3 5 7 10 -1 2 3 5 7 10 0 TIME (s)
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM130RZ/EZ/GZ-M,-H
HIGH POWER GENERAL USE
INSULATED TYPE
MAXIMUM AVERAGE POWER DISSIPATION (SINGLE PHASE HALFWAVE) AVERAGE POWER DISSIPATION (W) 160 120 140 120 60 100 80 60 40 20 0 0 20 40 60 360
RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT
LIMITING VALUE OF THE AVERAGE CURRENT (SINGLE PHASE HALFWAVE) 130 120 CASE TEMPERATURE (C) 110 100 90 80 70 60 50 0 20 40 60 80 100 120 140 160 =30 60 90 180 120 360
RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT
180
90
=30
80 100 120 140 160
AVERAGE CURRENT (A)
AVERAGE CURRENT (A)
AVERAGE POWER DISSIPATION (W)
200 180 160 140 120 100 80 60 40 20 0 0
MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) 270 DC 180 120 90 60 =30 360
RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT
LIMITING VALUE OF THE AVERAGE CURRENT (RECTANGULAR WAVE) 130 120 CASE TEMPERATURE (C) 110 100 90 80 70 60 50 0 40 80 120 160 200 =30 60 90 180 270 DC 120 360
RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT
40
80
120
160
200
AVERAGE CURRENT (A)
AVERAGE CURRENT (A)
AVERAGE POWER DISSIPATION (W)
MAXIMUM AVERAGE POWER DISSIPATION (REVERSE-PARALLEL CONNECTION, THREE-PHASE THREE-LINE CONNECTION) 400 350 300 250 200 150 100 50 0 0 40 80 120 160 200 240 280 320 RMS CURRENT (A) 360
RESISTIVE, INDUCTIVE LOAD PER SINGLE MODULE
LIMITING VALUE OF THE RMS CURRENT (REVERSE-PARALLEL CONNECTION, THREE-PHASE THREE-LINE CONNECTION) 130 120 CASE TEMPERATURE (C) 110 100 90 80 70 60 50 0 360
RESISTIVE, INDUCTIVE LOAD PER SINGLE MODULE
=180 120 90 60 30
=30 60 90 120 180
40
80 120 160 200 240 280 320 RMS CURRENT (A)
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM130RZ/EZ/GZ-M,-H
HIGH POWER GENERAL USE
INSULATED TYPE
MAXIMUM POWER DISSIPATION (SINGLE PHASE FULLWAVE RECTIFIED) 400 CASE TEMPERATURE (C) (PER SINGLE MODULE) POWER DISSIPATION (W) (PER SINGLE MODULE) 360
RESISTIVE, INDUCTIVE LOAD
LIMITING VALUE OF THE DC OUTPUT CURRENT (SINGLE PHASE FULLWAVE RECTIFIED) 130 120
320
180 120 90 60
110 100 90 80 70 60 =30 60 90 360
RESISTIVE, INDUCTIVE LOAD
240
160
=30
180 120
80
0
0
40
80 120 160 200 240 280 320
50
0
40
80 120 160 200 240 280 320 DC OUTPUT CURRENT (A) (PER TWO MODULES)
DC OUTPUT CURRENT (A) (PER TWO MODULES) MAXIMUM POWER DISSIPATION (THREE-PHASE FULLWAVE RECTIFIED) 400 CASE TEMPERATURE (C) (PER SINGLE MODULE) POWER DISSIPATION (W) (PER SINGLE MODULE) 360
RESISTIVE, INDUCTIVE LOAD
130 120 120 90 60 =30 110 100 90 80 70 60
LIMITING VALUE OF THE DC OUTPUT CURRENT (THREE-PHASE FULLWAVE RECTIFIED)
320
360
RESISTIVE, INDUCTIVE LOAD
240
=30 60 90 120
160
80
0
0
80
160
240
320
400
50
0
80
160
240
320
400
DC OUTPUT CURRENT (A) (PER THREE MODULES)
DC OUTPUT CURRENT (A) (PER THREE MODULES)
Feb.1999

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